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        功率MOS
        
			  
        
	
        


        
	  
        
		
		 
	  
        
	
        




        


        
	
        
		
		產(chǎn)品展示MOSFET功率MOS			
        



        

        
	
   
  	
   
        
		
        
		 
        
		   NCE12P09S
		 
        
		 
        
		   
        NCE12P09S
        
		   
        Description
The NCE12P09S uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages .This device is suitable for use as a load switching
application and a wide variety of other applications. General Features ● VDS = -12V,ID = -9A
RDS(ON) < 22m? @ VGS=-2.5V RDS(ON) < 18m? @ VGS=-4.5V ● Advanced trench MOSFET process techno
        
		 
        
	   
        
	   
	   
        
	      
         
        
			
        
									
        Description
The NCE12P09S uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages .This device is suitable for use as a load switching
application and a wide variety of other applications. 
        General Features 
        ● VDS = -12V,ID = -9A
RDS(ON) < 22m? @ VGS=-2.5V 
        RDS(ON) < 18m? @ VGS=-4.5V 
        ● Advanced trench MOSFET process technology 
        ● Ultra low on-resistance with low gate charge
Application
         ● PWM applications 
        ● Load switch 
        ● Battery charge in cellular handset

        
							
        
			
		  			
        
								 
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        NCE2333Y
        
							
        
	      	   
        
   
        
   
   

        


        


        




        


 
        












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